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IRF4905

HEXFET ® Power MOSFET

PD - 9.1280C

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220contribute to its wide acceptance throughout the industry.

Parameter

Max.

Units

I D @ T C = 25°C Continuous Drain Current, V GS @ -10V -74I D @ T C = 100°C Continuous Drain Current, V GS @ -10V -52A I DM

Pulsed Drain Current -260P D @T C = 25°C Power Dissipation 200W Linear Derating Factor 1.3W/°C V GS Gate-to-Source Voltage

± 20V E AS Single Pulse Avalanche Energy 930mJ I AR Avalanche Current

-38A E AR Repetitive Avalanche Energy 20mJ dv/dt Peak Diode Recovery dv/dt -5.0V/ns T J Operating Junction and

-55 to + 175T STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )°C

Mounting torque, 6-32 or M3 screw

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

R θJC Junction-to-Case

–––0.75R θCS Case-to-Sink, Flat, Greased Surface 0.50–––°C/W

R θJA

Junction-to-Ambient

–––

62

Thermal Resistance

V DSS = -55V

R DS(on) = 0.02Ω

I D = -74A

TO-220AB

l

Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating

l 175°C Operating Temperature l Fast Switching l P-Channel

l Fully Avalanche Rated Description

8/25/97

S

D

G

IRF4905

Electrical Characteristics @ T J = 25°C (unless otherwise specified)

Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ -38A, di/dt ≤ -270A/µs, V DD ≤ V (BR)DSS , T J ≤ 175°C

Notes:

Starting T J = 25°C, L = 1.3mH

R G = 25Ω, I AS = -38A. (See Figure 12)

Pulse width ≤ 300µs; duty cycle ≤ 2%.

Source-Drain Ratings and Characteristics

IRF4905

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics

110

1001000

0.1

1

10

100

D D S

-I , D r a i n -t o -S o u r c e C u r r e n t (A )

-V , Drain-to-Source Voltage (V)110

100

1000

0.1

1

10

100

D D S

-I , D r a i n -t o -S o u r c e C u r r e n t (A )

-V , Drain-to-Source Voltage (V)110

100

10004

5

6

7

8

9

10

G S

D

-I , D r a i n -t o -S o u r c e C u r r e n t (A )-V , Ga te-to-So urce Voltage (V)0.00.5

1.0

1.5

2.0

-60

-40-20

20

40

60

80

100120140160180

J

T , Junction Tem perature (°C )R

, D r a i n -t o -S o u r c e O n R e s i s t a n c e

D S (o n )(N o r m a l i z e d )

Fig 2. Typical Output Characteristics

IRF4905

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage

01000

2000

3000

4000

5000

6000

7000

1

10

100

C , C a p a c i t a n c e (p F )

D S -V , Drain-to-Source Voltage (V)

04

8

12

16

20

40

80

120

160

200

G

G S -V , G a t e -t o -S o u r c e

V o l t a g e (V )

Q , Total G ate C harge (nC)110

100

1000

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

SD S D -I , R e v e r s e D r a i n C u r r e n t (A )

-V , Source-to-Drain Voltage (V)1

10

100

1000

1

10

100

-I , D r a i n C u r r e n t (A )

-V , Drain-to-Source Voltage (V)DS

D

IRF4905

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

Case Temperature

R V DD

V V t t t t

IRF4905

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

V Charge

-10V

DS

Current Sampling Resistors

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

I AS

IRF4905 Peak Diode Recovery dv/dt Test Circuit

V DD

* Reverse Polarity of D.U.T for P-Channel

V GS

*** V

GS

= 5.0V for Logic Level and 3V Drive Devices

Fig 14. For P-Channel HEXFETS

IRF4905

L E A D A S S IG N M E N T S 1 - G A T E 2 - D R A IN 3 - S O U R C E 4 - D R A IN

- B -1.32 (.052)1.22 (.048)

3X

0.55 (.022)0.46 (.018)

2.92 (.115)2.64 (.104)

4.69(.185)4.20(.165)

3X 0.93(.037)0.69(.027

)

4.06 (.160)3.55 (.140)

1.15 (.045) M IN

6.47 (.255)6.10 (.240)

3.78 (.149)3.54 (.139)

- A -10.54 (.415)10.29 (.405)

2.87(.113)2.62(.103)

15.24(.600)14.84(.584)

14.09(.555)13.47(.530)

3X

1.40 (.055)1.15 (.045)

2.54(.100)

2X

0.36 (.014) M B A M

4

1 2 3

N O T E S :

1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 14.5M , 1982. 3 O U T L IN E C O N F O R M S T O J E D E C O U T LIN E T O -220A B.

2 C O N T R O L LIN G D IM E N S IO N : IN C H 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S.

Part Marking Information

TO-220AB

Package Outline

TO-220AB Outline

Dimensions are shown in millimeters (inches)

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/Data and specifications subject to change without notice.8/97

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